SiC-On-Insulator technology

SiCOI (SiC On Insulator) with color centers positions itself as an enabling technology for a wide range of quantum technologies.

Thanks to its patented fabrication process, our innovative platform offers, compared to competing SiCOI solutions, exceptional crystalline quality of the SiC layer and outstanding interface quality between the SiC and the insulator (or with air in the case of under-etching beneath the SiC).

These characteristics provide a significant advantage for quantum applications, where even the slightest unintentional defect in the host material near the qubits can be a source of quantum decoherence.

 ·       A COLOR CENTER IN SiCOI WORKS AT 5K : with simple cryogeny, without dilution and helium 3, AS A SINGLE PHOTON SOURCE, AS A SPIN QUBIT, AND AS A SPIN-PHOTON INTERFACE.

·       LONG ELECTRON SPIN QUBIT COHERENCE TIME IN SiC at 5K : > 1 ms

·       SINGLE EMITTER with FOURIER TRANSFORM LINEWIDTH AT 5K

·       ROOM TEMPERATURE OPERATION OF SiC SPIN QUBIT ALSO POSSIBLE with a spin qubit coherence time > 50 microseconds at RT.STRONG & STABLE SiCOI STRUCTURE

·       Can also help create QUANTUM MEMORY for other qubits types, like superconducting qubits

·       Possible to integrate SiC color center Spin Qubits with OPTICAL QUANTUM TELECOMMUNICATIONS.